Quick Detail:
FLASH MEMORY
Description:
The MT28F008B5 (x8) and MT28F800B5 (x16/x8) are nonvolatile, electrically block-erasable (Flash), programmable read-only memories containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process.
The MT28F008B5 and MT28F800B5 are organized into eleven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.
Applications:
• Eleven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
• Eight main memory blocks
• Smart 5 technology (B5):
5V ±10% VCC
5V ±10% VPP application/ production programming1
• Advanced 0.18µm CMOS floating-gate process
• Compatible with 0.3µm Smart 5 device
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• TSOP and SOP packaging options
• Byte- or word-wide READ and WRITE
(MT28F800B5, 1 Meg x 8/512K x 16)
Specifications:
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part no.
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MT28F800B5WP-8T
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Manufacturer
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Micron Technology
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supply ability
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10000
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datecode
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10+
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package
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TSOP
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remark
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new and original stock
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Competitive Advantage:
Warranty :180days for all goods
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Product Tags:
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Flash Memory IC Chip MT28F800B5WP-8T - Micron Technology - FLASH MEMORY Images
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